Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP62NS04ZCopy
Newark Part No.38K7930
Your Part Number
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP62NS04ZCopy
Newark Part No.38K7930
Channel TypeN Channel
Drain Source Voltage Vds33V
Continuous Drain Current Id62A
On Resistance Rds(on)0.0125ohm
Drain Source On State Resistance0.0125ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd110W
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Product Overview
The STP62NS04Z is a N-channel clamped fully protected Power MOSFET produced by using most advanced MESH OVERLAY™ process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness.
- 100% Avalanche tested
- Low capacitance and gate charge
- 175°C Maximum junction temperature
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
62A
Drain Source On State Resistance
0.0125ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
110W
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
To Be Advised
Drain Source Voltage Vds
33V
On Resistance Rds(on)
0.0125ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
