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TPC8120
Power MOSFET, P Channel, 30 V, 18 A, 0.0026 ohm, SOP, Surface Mount
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No Longer Available
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPC8120Copy
Newark Part No.55T7367
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id18A
Drain Source On State Resistance2600µohm
On Resistance Rds(on)0.0026ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd1.9W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The TPC8120 is a -30V Silicon P-channel MOSFET with low drain-source ON resistance. Suitable for use in lithium ion battery and power management switch applications.
- High forward transfer admittance
- Low leakage current
- Enhancement mode
- Small footprint due to small and thin package
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.0026ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Drain Source Voltage Vds
30V
Drain Source On State Resistance
2600µohm
Transistor Case Style
SOIC
Power Dissipation Pd
1.9W
Gate Source Threshold Voltage Max
800mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate