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TPH1R712MD,L1Q(M
Power MOSFET, P Channel, 20 V, 60 A, 0.0017 ohm, SOP, Surface Mount
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| 1+ | $0.653 |
| 10+ | $0.653 |
| 25+ | $0.653 |
| 50+ | $0.653 |
| 100+ | $0.653 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPH1R712MD,L1Q(M
Newark Part No.08AK7545
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0017ohm
On Resistance Rds(on)0.00135ohm
Transistor Case StyleSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation Pd78W
Power Dissipation78W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0017ohm
Transistor Case Style
SOP
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
78W
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Transistor Polarity
P Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.00135ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate