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IRFI644GPBF
Power MOSFET, N Channel, 250 V, 7.9 A, 0.28 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoIRFI644GPBFCopy
Manufacturer Standard Lead Time77 weeks
Newark Part No.63J6772
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 77 week(s)
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| Quantity | Price |
|---|---|
| 1000+ | $2.630 |
| 2500+ | $2.500 |
Price for:Each
Minimum: 1000
Multiple: 1000
$2,630.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFI644GPBFCopy
Manufacturer Standard Lead Time77 weeks
Newark Part No.63J6772
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id7.9A
Drain Source On State Resistance0.28ohm
On Resistance Rds(on)0.28ohm
Transistor MountingThrough Hole
Power Dissipation Pd40W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220FP
Gate Source Threshold Voltage Max4V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFI644GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
- 4.8mm Sink to lead creepage distance
- Dynamic dV/dt rating
- Low thermal resistance
Applications
Industrial, Power Management, Commercial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.28ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
7.9A
On Resistance Rds(on)
0.28ohm
Power Dissipation Pd
40W
Transistor Case Style
TO-220FP
Power Dissipation
40W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Alternatives for IRFI644GPBF
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate