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SI1442DH-T1-GE3
MOSFET, N-CH, 12V, 4A, SOT-363
3,300 In Stock
54,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.610 | $3.05 |
| Total Price | $3.05 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.610 |
| 15+ | $0.296 |
| 25+ | $0.290 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1442DH-T1-GE3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.
Re-Reel57AJ0426RL
Cut Tape57AJ0426
Product RangeTrench
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id4A
On Resistance Rds(on)0.017ohm
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation2.8W
Power Dissipation Pd2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrench
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.017ohm
Transistor Case Style
SOT-363
Rds(on) Test Voltage
4.5V
Power Dissipation
2.8W
No. of Pins
6Pins
Product Range
Trench
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
2.8W
Operating Temperature Max
150°C
Qualification
-
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate