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SI2301BDS-T1-E3
Power MOSFET, P Channel, 20 V, 2.2 A, 0.1 ohm, TO-236, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301BDS-T1-E3
Newark Part No.06J7561
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.2A
On Resistance Rds(on)0.1ohm
Drain Source On State Resistance0.1ohm
Transistor MountingSurface Mount
Power Dissipation Pd900mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max950mV
Transistor Case StyleTO-236
Power Dissipation900mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2301BDS-T1-E3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Drain Source On State Resistance
0.1ohm
Power Dissipation Pd
900mW
Gate Source Threshold Voltage Max
950mV
Power Dissipation
900mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability