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SI2323DS-T1-E3
Power MOSFET, P Channel, 20 V, 4.7 A, 0.039 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2323DS-T1-E3
Newark Part No.06J7584
Product RangeTrenchFET Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2323DS-T1-E3
Newark Part No.06J7584
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.7A
On Resistance Rds(on)0.039ohm
Drain Source On State Resistance0.039ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.25W
Gate Source Threshold Voltage Max1V
Transistor Case StyleTO-236
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2323DS-T1-E3 is a P-channel TrenchFET® Power MOSFET with power dissipation at 1.25W.
- ±8V Gate-source voltage
- Halogen-free
Applications
Industrial
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.039ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.25W
Transistor Case Style
TO-236
No. of Pins
3Pins
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
4.7A
Drain Source On State Resistance
0.039ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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