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SI2337DS-T1-GE3
MOSFET, P-CH, 80V, 2.2A, SOT-23
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2337DS-T1-GE3Copy
Newark Part No.
Full Reel96AJ0111
Re-Reel61AC1930RL
Cut Tape61AC1930
Your Part Number
721 In Stock
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2337DS-T1-GE3Copy
Newark Part No.
Full Reel96AJ0111
Re-Reel61AC1930RL
Cut Tape61AC1930
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id2.2A
Drain Source On State Resistance0.27ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Gate Source Threshold Voltage Max4V
Power Dissipation760mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
6V
Power Dissipation
760mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate