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| Quantity | Price |
|---|---|
| 3000+ | $0.116 |
| 6000+ | $0.112 |
| 12000+ | $0.108 |
| 18000+ | $0.106 |
| 30000+ | $0.105 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$348.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2365EDS-T1-GE3
Newark Part No.05AC9484
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.9A
Drain Source On State Resistance0.032ohm
On Resistance Rds(on)0.0265ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.7W
Power Dissipation Pd1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.032ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
No. of Pins
3Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
5.9A
On Resistance Rds(on)
0.0265ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI2365EDS-T1-GE3
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability