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SI4456DY-T1-E3
Power MOSFET, N Channel, 40 V, 33 A, 0.0045 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$3,950.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4456DY-T1-E3
Newark Part No.64M1992
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id33A
Drain Source On State Resistance0.0045ohm
On Resistance Rds(on)0.0045ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd3.5W
Gate Source Threshold Voltage Max2.8V
Power Dissipation3.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead
Product Overview
The SI4456DY-T1-E3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for secondary rectification and point of load applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0045ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
On Resistance Rds(on)
0.0045ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.5W
Power Dissipation
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate