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ManufacturerVISHAY
Manufacturer Part NoSI4456DY-T1-E3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.64M1992
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 2500+ | $2.240 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$5,600.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4456DY-T1-E3Copy
Manufacturer Standard Lead Time36 weeks
Newark Part No.64M1992
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id33A
Drain Source On State Resistance0.0045ohm
On Resistance Rds(on)0.0045ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd3.5W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.8V
Power Dissipation3.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead
Product Overview
The SI4456DY-T1-E3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for secondary rectification and point of load applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0045ohm
Transistor Case Style
SOIC
Power Dissipation Pd
3.5W
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
On Resistance Rds(on)
0.0045ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Power Dissipation
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
