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SI4816BDY-T1-E3
MOSFET, DUAL N-CH, 30V, 5.8A, NSOIC-8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-E3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.
Full Reel73W9413
Re-Reel61AC1935RL
Cut Tape61AC1935
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.620 | $2.62 |
| Total Price | $2.62 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.620 |
| 50+ | $1.690 |
| 100+ | $1.160 |
| 250+ | $1.050 |
| 500+ | $0.950 |
| 1000+ | $0.849 |
| 2500+ | $0.799 |
| 5000+ | $0.790 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.799 |
| 7500+ | $0.783 |
| 12500+ | $0.767 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-E3Copy
Manufacturer Standard Lead Time38 weeks
Newark Part No.
Full Reel73W9413
Re-Reel61AC1935RL
Cut Tape61AC1935
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.8A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel5.8A
Continuous Drain Current Id P Channel5.8A
Drain Source On State Resistance N Channel9300µohm
Drain Source On State Resistance P Channel9300µohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel + Schottky
Continuous Drain Current Id
5.8A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
5.8A
Drain Source On State Resistance P Channel
9300µohm
No. of Pins
8Pins
Power Dissipation P Channel
1.25W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
5.8A
Drain Source On State Resistance N Channel
9300µohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Alternatives for SI4816BDY-T1-E3
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate