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SI6954ADQ-T1-GE3
Dual MOSFET, Dual N Channel, 30 V, 3.1 A, 0.053 ohm
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6954ADQ-T1-GE3Copy
Newark Part No.16P3814
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id3.1A
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel3.1A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.053ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
Dual N Channel
Continuous Drain Current Id
3.1A
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
3.1A
Drain Source On State Resistance N Channel
0.053ohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate