ASSR-601JT-000E

ASSR-601JT-000E is an automotive photo MOSFET with R²Coupler™ isolation. It consists of an AlGaAs infrared light emitting diode (LED) input stage optically coupled to a high-voltage output detector circuit. The detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high-voltage MOSFETs. The Photo MOSFET turns on (contact closes) with a minimum input current of 7mA through the input LED. The Photo MOSFET turns off (contact opens) with an input voltage of 0.4V or less. It provides reinforced insulation and reliability that delivers safe signal isolation critical in automotive and high temperature industrial applications. It is also used in applications such as battery insulation resistance measurement/leakage detection, BMS flying capacitor topology for sensing batteries.

• Compact solid-state bidirectional signal switch, qualified to AEC-Q101 test guidelines
• Output withstand voltage is 1700V typ at (IO = 250µA, TA = 25°C)
• Avalanche rated MOSFETs, safety and regulatory approvals
• Output resistance is 250 ohm typ at (IO = 10mA, TA = 25°C, IF = 10mA)
• Turn-on time is 0.8ms typ at (IF = 10mA, VDD = 40V, RLOAD = 20Kohm)
• Turn-off time is 0.05ms typ at ( VDD = 40V, RLOAD = 20Kohm)
• Output leakage current 0.3nA typ at (VO = 1000V, TA = 25°C, IF = 10mA)
• Output capacitance is 190pF typ at (VO = 0V, f = 1MHz)
• Operating temperature range from -40°C to 105°C
• SO-16 package