HMC415LP3E

HMC415LP3E is a high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier which operates between 4.9 and 5.9GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20dB of gain, +26dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 & HMC415LP3E achieve an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. This amplifier is ideal for use as a power amplifier for 4.9 - 5.9GHz applications:802.11a WLAN, HiperLAN WLAN, access points and UNII & ISM radios.

• Power down capability, low external part count
• Frequency range from 4.9 to 5.1GHz (TA = +25°C, Vs = 3V, Vpd = 3V)
• Gain is 20dB (typ, 4.9 to 5.1MHz, TA = +25°C, Vs = 3V, Vpd = 3V)
• Gain variation over temperature is 0.04dB / °C (typ, 4.9 to 5.1MHz, TA = +25° C, Vs = 3V, Vpd = 3V)
• Input return loss is 10dB (typ, 4.9 to 5.1MHz, TA = +25° C, Vs = 3V, Vpd = 3V)
• Output return loss is 10dB (typ, 4.9 to 5.1MHz, TA = +25° C, Vs = 3V, Vpd = 3V)
• Output power for 1dB compression is 22.5dBm (typ, Icq = 285mA, 4.9 to 5.1MHz)
• Saturated output power is 25.5dBm (typ, TA = +25° C, Vs = 3V, Vpd = 3V, 4.9 to 5.1MHz)
• Output third order intercept is 31dBm (typ, TA = +25° C, Vs = 3V, Vpd = 3V, 4.9 to 5.1MHz)
• 16 pin QFN-EP, operating temperature range from -40 to +85°C

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party