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NVMFD5C470NLWFET1G
MOSFET, N-CHANNEL, 36A, DFN-8
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVMFD5C470NLWFET1GCopy
Manufacturer Standard Lead Time99 weeks
Newark Part No.11AN7186
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 99 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.120 |
| 10+ | $0.954 |
| 25+ | $0.861 |
| 50+ | $0.781 |
| 100+ | $0.654 |
| 250+ | $0.579 |
| 500+ | $0.504 |
| 1000+ | $0.483 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.12
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFD5C470NLWFET1GCopy
Manufacturer Standard Lead Time99 weeks
Newark Part No.11AN7186
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel36A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.0115ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleDFN
No. of Pins8Pins
Power Dissipation N Channel28W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
36A
Drain Source On State Resistance N Channel
0.0115ohm
Transistor Case Style
DFN
Power Dissipation N Channel
28W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate