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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.0274ohm
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MOSFET Module Configuration
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$43.040 5+$41.850 10+$39.030 25+$36.280 50+$30.400 More Pricing... | Single | N Channel | 100A | 1.2kV | 0.0274ohm | TO-247 | 4Pins | 20V | 4V | 517W | 175°C | ||||||
Each | 1+$44.520 5+$41.360 10+$38.200 25+$35.040 50+$31.880 More Pricing... | Single | N Channel | 100A | 1.2kV | 0.0274ohm | TO-247 | 3Pins | 20V | 4V | 517W | 175°C | ||||||
