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DIF120SIC028
Silicon Carbide MOSFET, Single, N Channel, 100 A, 1.2 kV, 0.0274 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $34.690 |
| 5+ | $33.170 |
| 10+ | $31.480 |
| 25+ | $29.960 |
| 50+ | $28.260 |
| 100+ | $27.760 |
| 250+ | $27.080 |
Price for:Each
Minimum: 1
Multiple: 1
$34.69
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Product Information
ManufacturerDIOTEC
Manufacturer Part NoDIF120SIC028
Newark Part No.26AM0852
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0274ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation517W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0274ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
517W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
Product traceability