Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.162ohm
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MOSFET Module Configuration
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Drain Source Voltage Vds
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$15.410 10+$13.800 25+$12.180 50+$10.570 100+$10.000 More Pricing... | Single | N Channel | N Channel | 17A | 1.2kV | 0.162ohm | 0.162ohm | TO-247 | 3Pins | 20V | 3.1V | 119W | 119W | 175°C | EliteSiC Series | ||||||
Each | 1+$9.920 10+$5.840 25+$5.610 50+$5.370 100+$5.270 More Pricing... | Single | - | N Channel | 17A | 1.2kV | - | 0.162ohm | TO-247 | 3Pins | 20V | 3.1V | - | 119W | 175°C | EliteSiC Series | ||||||
Each | 1+$10.580 10+$9.750 25+$9.020 50+$8.590 100+$8.140 More Pricing... | Single | N Channel | N Channel | 17A | 1.2kV | 0.162ohm | 0.162ohm | TO-247 | 3Pins | 20V | 3.1V | 119W | 119W | 175°C | EliteSiC Series | ||||||


