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NTHL160N120SC1
Silicon Carbide MOSFET, Single, N Channel, 17 A, 1.2 kV, 0.162 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTHL160N120SC1
Newark Part No.91AH8489
Product RangeEliteSiC Series
Technical Datasheet
69 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $4.560 |
| 10+ | $4.560 |
| 25+ | $4.560 |
| 50+ | $4.560 |
| 100+ | $4.560 |
| 250+ | $4.560 |
| 900+ | $4.560 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHL160N120SC1
Newark Part No.91AH8489
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id17A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.162ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3.1V
Power Dissipation119W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
17A
Drain Source On State Resistance
0.162ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.1V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
119W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability