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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.169ohm
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MOSFET Module Configuration
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$12.090 10+$11.410 25+$11.120 50+$10.170 100+$9.660 More Pricing... | Single | N Channel | N Channel | 20A | 1.2kV | 0.169ohm | 0.169ohm | HiP247 | 3Pins | 20V | 3.5V | 175W | 175W | 200°C | ||||||
69AH2149 RoHS | Each | 1+$16.060 10+$15.250 25+$14.960 50+$13.920 100+$13.410 More Pricing... | Single | N Channel | N Channel | 20A | 1.2kV | 0.169ohm | 0.169ohm | TO-247 | 3Pins | 20V | 3.5V | 153W | 153W | 200°C | |||||
