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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.41ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$13.820 10+$11.950 25+$10.080 50+$8.200 100+$7.530 More Pricing... | Single | N Channel | N Channel | 7.6A | 1.2kV | 0.41ohm | 0.41ohm | TO-247 | 3Pins | 12V | 4.7V | 100W | 100W | 175°C | ||||||
Each | 1+$12.550 10+$7.080 25+$6.970 50+$6.870 100+$6.730 More Pricing... | Single | N Channel | N Channel | 7.6A | 1.7kV | 0.41ohm | 0.41ohm | TO-247 | 3Pins | 12V | 4.7V | 100W | 100W | 175°C | ||||||
