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Silicon Carbide (SiC) MOSFETs & Modules :

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MOSFET Module Configuration
Transistor Polarity
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Continuous Drain Current Id
Drain Source Voltage Vds
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Gate Source Threshold Voltage Max
Power Dissipation Pd
Power Dissipation
Operating Temperature Max
88AH6169

RoHS

Each
1+$1,293.310
5+$1,267.440
10+$1,241.580
25+$1,215.700
Half Bridge
Dual N Channel
Dual N Channel
400A
1.2kV
Module
5.6V
1.57kW
1.57kW
150°C
88AH6167
Each
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N Channel
N Channel
400A
1.2kV
Module
5.6V
1.57kW
1.57kW
150°C
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