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2N7002-7-F
Power MOSFET, N Channel, 60 V, 210 mA, 5 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part No2N7002-7-FCopy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel86AK6726
Re-Reel25R5679RL
Cut Tape25R5679
Your Part Number
93,105 In Stock
267,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.215 | $0.22 |
| Total Price | $0.22 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.215 |
| 50+ | $0.133 |
| 100+ | $0.084 |
| 250+ | $0.074 |
| 500+ | $0.064 |
| 1000+ | $0.056 |
| 2500+ | $0.055 |
| 5000+ | $0.054 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.037 |
| 6000+ | $0.035 |
| 12000+ | $0.033 |
| 18000+ | $0.031 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002-7-FCopy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Full Reel86AK6726
Re-Reel25R5679RL
Cut Tape25R5679
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id210mA
On Resistance Rds(on)13.5ohm
Drain Source On State Resistance5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd300mW
Gate Source Threshold Voltage Max2.5V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The case is made of molded plastic, "Green" molding compound (UL94V-0).
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability
Applications
Motor Drive & Control, Power Management, Defence, Military & Aerospace
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
13.5ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
210mA
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
300mW
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate