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BSS123W-7-F
MOSFET, N-CH, 100V, 0.17A, SOT-323
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoBSS123W-7-FCopy
Manufacturer Standard Lead Time42 weeks
Newark Part No.
Full Reel86AK4528
Re-Reel07AH3634RL
Cut Tape07AH3634
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.429 | $2.14 |
| Total Price | $2.14 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.429 |
| 15+ | $0.272 |
| 25+ | $0.229 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.103 |
| 9000+ | $0.090 |
| 15000+ | $0.087 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS123W-7-FCopy
Manufacturer Standard Lead Time42 weeks
Newark Part No.
Full Reel86AK4528
Re-Reel07AH3634RL
Cut Tape07AH3634
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
On Resistance Rds(on)6ohm
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Power Dissipation Pd200mW
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
BSS123W-7-F is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include small servo motor controls, power MOSFET gate drivers, switching applications.
- Low gate threshold voltage, low input capacitance
- Fast switching speed, low input/output leakage
- High drain-source voltage rating
- Drain-source voltage is 100V at TA=+25°C
- Continuous gate-source voltage is ±20V at TA=+25°C
- Pulsed drain current is 680mA at TA=+25°C
- Total power dissipation is 200mW at TA=+25°C
- Static drain-source on-resistance is 6ohm max at VGS=10V, ID=0.17A, TA=+25°C
- SOT323 package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
6ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Power Dissipation Pd
200mW
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
170mA
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate