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DMN3401LDW-13
MOSFET, DUAL, N-CH, 30V, 0.8A
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.405 |
| 10+ | $0.258 |
| 25+ | $0.228 |
| 50+ | $0.199 |
| 100+ | $0.169 |
| 250+ | $0.150 |
| 500+ | $0.130 |
| 1000+ | $0.110 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.03
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN3401LDW-13
Newark Part No.28AK8575
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id800mA
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel800mA
Continuous Drain Current Id P Channel800mA
Drain Source On State Resistance N Channel0.4ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel350mW
Power Dissipation P Channel350mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
800mA
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
350mW
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
800mA
Continuous Drain Current Id N Channel
800mA
Drain Source On State Resistance N Channel
0.4ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
350mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability