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ZXMS6004DN8-13
MOSFET, DUAL N-CH, 60V, 1.2A, SOIC
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ManufacturerDIODES INC.
Manufacturer Part NoZXMS6004DN8-13
Newark Part No.07AH4945
Product RangeIntelliFET Series
Technical Datasheet
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMS6004DN8-13
Newark Part No.07AH4945
Product RangeIntelliFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id1.2A
Continuous Drain Current Id N Channel1.2A
Continuous Drain Current Id P Channel1.2A
Drain Source On State Resistance N Channel0.35ohm
Drain Source On State Resistance P Channel0.35ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.21W
Power Dissipation P Channel1.21W
Operating Temperature Max150°C
Product RangeIntelliFET Series
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
1.2A
Continuous Drain Current Id P Channel
1.2A
Drain Source On State Resistance P Channel
0.35ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.21W
Product Range
IntelliFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
1.2A
Drain Source On State Resistance N Channel
0.35ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.21W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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