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DIW170SIC049
Silicon Carbide MOSFET, Single, N Channel, 67 A, 1.7 kV, 0.049 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $24.170 |
| 10+ | $22.790 |
| 25+ | $22.260 |
| 50+ | $20.350 |
| 100+ | $19.400 |
| 250+ | $17.380 |
| 500+ | $16.960 |
Price for:Each
Minimum: 1
Multiple: 1
$24.17
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Product Information
ManufacturerDIOTEC
Manufacturer Part NoDIW170SIC049
Newark Part No.26AM0859
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id67A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance0.049ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation357W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
67A
Drain Source On State Resistance
0.049ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
357W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
Product traceability