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G3F05MT12GB2
Silicon Carbide MOSFET, Half Bridge, N Channel, 216 A, 1.2 kV, 0.0062 ohm, Module
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ManufacturerGENESIC
Manufacturer Part NoG3F05MT12GB2
Newark Part No.39AM8763
Product RangeSiCPAK G Series
Technical Datasheet
48 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $264.300 |
| 5+ | $260.380 |
| 10+ | $256.580 |
| 25+ | $241.180 |
Price for:Each
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Multiple: 1
$264.30
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3F05MT12GB2
Newark Part No.39AM8763
Product RangeSiCPAK G Series
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id216A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance6200µohm
Transistor Case StyleModule
No. of Pins36Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation444W
Operating Temperature Max175°C
Product RangeSiCPAK G Series
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
216A
Drain Source On State Resistance
6200µohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
444W
Product Range
SiCPAK G Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate