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G3F09MT12GB4
Silicon Carbide MOSFET, Full Bridge, N Channel, 104 A, 1.2 kV, 0.0125 ohm, Module
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ManufacturerGENESIC
Manufacturer Part NoG3F09MT12GB4
Newark Part No.39AM8765
Product RangeSiCPAK G Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $264.150 |
| 5+ | $260.220 |
| 10+ | $256.420 |
| 25+ | $241.040 |
Price for:Each
Minimum: 1
Multiple: 1
$264.15
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3F09MT12GB4
Newark Part No.39AM8765
Product RangeSiCPAK G Series
Technical Datasheet
MOSFET Module ConfigurationFull Bridge
Channel TypeN Channel
Continuous Drain Current Id104A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0125ohm
Transistor Case StyleModule
No. of Pins34Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation216W
Operating Temperature Max175°C
Product RangeSiCPAK G Series
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Full Bridge
Continuous Drain Current Id
104A
Drain Source On State Resistance
0.0125ohm
No. of Pins
34Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
216W
Product Range
SiCPAK G Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate