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GS0650112LMRXUSA1
Gallium Nitride (GaN) Transistor, 650 V, 11 A, 0.195 ohm, 2.2 nC, PDFN, Surface Mount
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150 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $5.950 |
| 10+ | $5.260 |
| 25+ | $4.820 |
| 50+ | $4.350 |
| 100+ | $3.780 |
| 250+ | $3.000 |
| 500+ | $2.850 |
| 1000+ | $2.680 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.95
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Product Information
ManufacturerINFINEON
Manufacturer Part NoGS0650112LMRXUSA1
Newark Part No.42AM5330
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id11A
Drain Source On State Resistance0.195ohm
Typical Gate Charge2.2nC
Transistor Case StylePDFN
Transistor MountingSurface Mount
No. of Pins8Pins
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.195ohm
Transistor Case Style
PDFN
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
11A
Typical Gate Charge
2.2nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate