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IGB110S10S1XTMA1
Gallium Nitride (GaN) Transistor, 100 V, 23 A, 0.011 ohm, 3.4 nC, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGB110S10S1XTMA1
Newark Part No.26AM1112
Product RangeCoolGaN Series
Technical Datasheet
4,668 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.940 |
| 10+ | $1.240 |
| 25+ | $1.110 |
| 50+ | $0.976 |
| 100+ | $0.843 |
| 250+ | $0.759 |
| 500+ | $0.673 |
| 1000+ | $0.650 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.94
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGB110S10S1XTMA1
Newark Part No.26AM1112
Product RangeCoolGaN Series
Technical Datasheet
Drain Source Voltage Vds100V
Continuous Drain Current Id23A
Drain Source On State Resistance0.011ohm
Typical Gate Charge3.4nC
Transistor Case StyleTSON
Transistor MountingSurface Mount
No. of Pins4Pins
Product RangeCoolGaN Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.011ohm
Transistor Case Style
TSON
No. of Pins
4Pins
Qualification
-
Continuous Drain Current Id
23A
Typical Gate Charge
3.4nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate