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IMW120R014M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMW120R014M1HXKSA1
Newark Part No.32AK4930
Product RangeCoolSiC Trench Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $40.020 |
| 5+ | $37.420 |
| 10+ | $34.820 |
| 25+ | $32.210 |
| 50+ | $29.610 |
| 100+ | $29.500 |
| 480+ | $29.380 |
Price for:Each
Minimum: 1
Multiple: 1
$40.02
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMW120R014M1HXKSA1
Newark Part No.32AK4930
Product RangeCoolSiC Trench Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id127A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation455W
Power Dissipation Pd455W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.014ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
4.2V
Power Dissipation Pd
455W
Product Range
CoolSiC Trench Series
Transistor Polarity
N Channel
Continuous Drain Current Id
127A
On Resistance Rds(on)
0.014ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
455W
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate