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IPB054N08N3GATMA1
MOSFET Transistor, N Channel, 80 A, 80 V, 0.0046 ohm, 10 V, 2.8 V RoHS Compliant: Yes
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No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB054N08N3GATMA1Copy
Newark Part No.50Y2005
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id80A
On Resistance Rds(on)0.0046ohm
Drain Source On State Resistance4600µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd150W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0046ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
150W
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
4600µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
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