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IPD70R600P7SAUMA1
Power MOSFET, N Channel, 700 V, 8.5 A, 0.6 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD70R600P7SAUMA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK5233
Re-Reel16AC3358RL
Cut Tape16AC3358
Product RangeCoolMOS P7
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.340 | $1.34 |
| Total Price | $1.34 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.340 |
| 50+ | $0.902 |
| 100+ | $0.629 |
| 250+ | $0.587 |
| 500+ | $0.546 |
| 1000+ | $0.517 |
| 2500+ | $0.432 |
| 5000+ | $0.424 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.330 |
| 5000+ | $0.316 |
| 10000+ | $0.303 |
| 15000+ | $0.288 |
| 25000+ | $0.270 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD70R600P7SAUMA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK5233
Re-Reel16AC3358RL
Cut Tape16AC3358
Product RangeCoolMOS P7
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds700V
Continuous Drain Current Id8.5A
On Resistance Rds(on)0.49ohm
Drain Source On State Resistance0.6ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd43.1W
Power Dissipation43.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS P7
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
700V CoolMOS™ P7 power transistor a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and recommended for Flyback topologies for example used in chargers, adapters, lighting applications, etc.
- Extremely low losses due to very low FOM Rds(on)*Qg and Rds(on)*Eoss
- Excellent thermal behaviour
- Integrated ESD protection diode
- Low switching losses (Eoss)
- Qualified for standard grade applications
- Cost competitive technology
- Lower temperature
- High ESD ruggedness
- Enables efficiency gains at higher switching frequencies
- Enables high power density designs and small form factors
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
700V
On Resistance Rds(on)
0.49ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
43.1W
No. of Pins
3Pins
Product Range
CoolMOS P7
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Continuous Drain Current Id
8.5A
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
43.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate