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IPP65R095C7XKSA1
Power MOSFET, N Channel, 650 V, 24 A, 0.095 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPP65R095C7XKSA1Copy
Manufacturer Standard Lead Time50 weeks
Newark Part No.13AC9084
Product RangeCoolMOS C7
Your Part Number
586 In Stock
2,500 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $8.080 |
| 10+ | $6.810 |
| 25+ | $5.550 |
| 50+ | $4.280 |
| 100+ | $3.920 |
| 250+ | $3.600 |
| 500+ | $3.270 |
Price for:Each
Minimum: 1
Multiple: 1
$8.08
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP65R095C7XKSA1Copy
Manufacturer Standard Lead Time50 weeks
Newark Part No.13AC9084
Product RangeCoolMOS C7
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id24A
On Resistance Rds(on)0.084ohm
Drain Source On State Resistance0.095ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation Pd128W
Power Dissipation128W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
650V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages and PWM stages for e.g. computing, server, telecom, UPS and solar.
- Increased MOSFET dv/dt ruggedness
- Better efficiency due to best in class FOM RDS(on) *Eoss and RDS(on)*Qg
- Best-in-class RDS(on)/package
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Enabling higher system efficiency
- Enabling higher frequency/increased power density solutions
- System cost/size savings due to reduced cooling requirements
- Higher system reliability due to lower operating temperatures
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.084ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation Pd
128W
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
24A
Drain Source On State Resistance
0.095ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
Power Dissipation
128W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate