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IRL40SC228
Power MOSFET, N Channel, 40 V, 360 A, 650 µohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRL40SC228Copy
Manufacturer Standard Lead Time13 weeks
Newark Part No.
Re-Reel43AC3302
Cut Tape43AC3302
Product RangeStrongIRFET
Your Part Number
609 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $5.820 | $5.82 |
| Total Price | $5.82 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $5.820 |
| 10+ | $4.090 |
| 25+ | $3.760 |
| 50+ | $3.420 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL40SC228Copy
Manufacturer Standard Lead Time13 weeks
Newark Part No.
Re-Reel43AC3302
Cut Tape43AC3302
Product RangeStrongIRFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id360A
On Resistance Rds(on)500µohm
Drain Source On State Resistance650µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation Pd416W
Power Dissipation416W
No. of Pins7Pins
Operating Temperature Max175°C
Product RangeStrongIRFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
HEXFET® Power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Optimized for logic level drive
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
500µohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
416W
No. of Pins
7Pins
Product Range
StrongIRFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
360A
Drain Source On State Resistance
650µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
Power Dissipation
416W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate