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IRLL024NTRPBF
Power MOSFET, N Channel, 55 V, 3.1 A, 0.065 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRLL024NTRPBFCopy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Re-Reel40M7983
Cut Tape40M7983
Also Known AsSP001568956
Your Part Number
22,687 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.150 | $1.15 |
| Total Price | $1.15 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.150 |
| 10+ | $0.751 |
| 25+ | $0.674 |
| 50+ | $0.597 |
| 100+ | $0.520 |
| 250+ | $0.470 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLL024NTRPBFCopy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Re-Reel40M7983
Cut Tape40M7983
Also Known AsSP001568956
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id3.1A
On Resistance Rds(on)0.065ohm
Drain Source On State Resistance0.065ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1W
Gate Source Threshold Voltage Max2V
Power Dissipation1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLL024NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
- Advanced process technology
- Ultra-low ON-resistance
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
- Logic level
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.065ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
3.1A
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1W
Power Dissipation
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate