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IRLR024NTRPBF
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRLR024NTRPBFCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK5412
Re-Reel63J7621RL
Cut Tape63J7621
Also Known AsSP001578872
Your Part Number
7,424 In Stock
36,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.360 | $1.36 |
| Total Price | $1.36 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.360 |
| 50+ | $0.673 |
| 100+ | $0.605 |
| 250+ | $0.546 |
| 500+ | $0.487 |
| 1000+ | $0.477 |
| 2500+ | $0.467 |
| 5000+ | $0.457 |
Full Reel
| Quantity | Price |
|---|---|
| 2000+ | $0.366 |
| 6000+ | $0.332 |
| 10000+ | $0.325 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLR024NTRPBFCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK5412
Re-Reel63J7621RL
Cut Tape63J7621
Also Known AsSP001578872
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id17A
Drain Source On State Resistance0.065ohm
On Resistance Rds(on)0.065ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd45W
Gate Source Threshold Voltage Max2V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRLR024NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.065ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
17A
On Resistance Rds(on)
0.065ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
45W
Power Dissipation
45W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability