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TDB6HK180N16RRB11BOSA1
IGBT Module, 140 A, 1.75 V, 515 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoTDB6HK180N16RRB11BOSA1Copy
Newark Part No.49AC0812
Your Part Number
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoTDB6HK180N16RRB11BOSA1Copy
Newark Part No.49AC0812
Technical Datasheet
IGBT Configuration-
DC Collector Current140A
Continuous Collector Current140A
Collector Emitter Saturation Voltage Vce(on)1.75V
Collector Emitter Saturation Voltage1.75V
Power Dissipation Pd515W
Power Dissipation515W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationPress Fit
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
IGBT Configuration
-
Continuous Collector Current
140A
Collector Emitter Saturation Voltage
1.75V
Power Dissipation
515W
Operating Temperature Max
150°C
IGBT Termination
Press Fit
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
DC Collector Current
140A
Collector Emitter Saturation Voltage Vce(on)
1.75V
Power Dissipation Pd
515W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
IGBT Technology
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate