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IXTP2N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 2 A, 2.3 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP2N65X2Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.02AC9841
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 42 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.390 |
| 10+ | $3.670 |
| 25+ | $2.950 |
| 50+ | $2.230 |
| 100+ | $2.010 |
| 250+ | $1.830 |
| 500+ | $1.650 |
Price for:Each
Minimum: 1
Multiple: 1
$4.39
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP2N65X2Copy
Manufacturer Standard Lead Time42 weeks
Newark Part No.02AC9841
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id2A
Drain Source On State Resistance2.3ohm
On Resistance Rds(on)2.3ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd55W
Gate Source Threshold Voltage Max5V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (17-Jan-2023)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
2.3ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2A
On Resistance Rds(on)
2.3ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
55W
Power Dissipation
55W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate