Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerLITTELFUSE
Manufacturer Part NoIXFK520N075T2Copy
Manufacturer Standard Lead Time25 weeks
Newark Part No.03AH0684
Product RangeTrenchT2/ GigaMOS/ HiPerFET Series
Your Part Number
266 In Stock
Need more?
FREE Standard Delivery
on orders over $150
| Quantity | Price |
|---|---|
| 1+ | $17.990 |
| 10+ | $14.740 |
| 25+ | $11.500 |
| 50+ | $10.730 |
| 100+ | $9.950 |
| 250+ | $9.670 |
| 500+ | $9.370 |
Price for:Each
Minimum: 1
Multiple: 1
$17.99
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFK520N075T2Copy
Manufacturer Standard Lead Time25 weeks
Newark Part No.03AH0684
Product RangeTrenchT2/ GigaMOS/ HiPerFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id520A
Drain Source On State Resistance0.0022ohm
On Resistance Rds(on)0.0022ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.25kW
Power Dissipation Pd1.25kW
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product RangeTrenchT2/ GigaMOS/ HiPerFET Series
MSL-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode. It Is suitable for use in DC-DC converters and Off-line UPS, primary-side switch, high speed power switching applications.
- TrenchT2™ GigaMOS™ HiperFET™ power MOSFET
- High current handling capability
- Low RDS(on)
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0022ohm
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Power Dissipation
1.25kW
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
520A
On Resistance Rds(on)
0.0022ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
1.25kW
Operating Temperature Max
175°C
Product Range
TrenchT2/ GigaMOS/ HiPerFET Series
SVHC
To Be Advised
Technical Docs (2)
Alternatives for IXFK520N075T2
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
