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BS170
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoBS170Copy
Manufacturer Standard Lead Time24 weeks
Newark Part No.58K8772
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price |
|---|---|
| 10000+ | $0.111 |
| 25000+ | $0.097 |
Price for:Each
Minimum: 10000
Multiple: 10000
$1,110.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBS170Copy
Manufacturer Standard Lead Time24 weeks
Newark Part No.58K8772
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
On Resistance Rds(on)1.2ohm
Drain Source On State Resistance5ohm
Transistor MountingThrough Hole
Power Dissipation Pd830mW
Rds(on) Test Voltage10V
Transistor Case StyleTO-92
Gate Source Threshold Voltage Max2.1V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.2ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
500mA
Drain Source On State Resistance
5ohm
Power Dissipation Pd
830mW
Transistor Case Style
TO-92
Power Dissipation
830mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Alternatives for BS170
3 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate