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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS138LT3G
Newark Part No.09R9392
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id200mA
Drain Source On State Resistance5.6ohm
On Resistance Rds(on)5.6ohm
Transistor MountingSurface Mount
Power Dissipation Pd225mW
Rds(on) Test Voltage2.75V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max500mV
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space.
- ±20VDC Continuous gate-to-source voltage
- 556°C/W Junction-to-ambient thermal resistance
Applications
Power Management, Consumer Electronics, Computers & Computer Peripherals
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
50V
Drain Source On State Resistance
5.6ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
2.75V
Gate Source Threshold Voltage Max
500mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
5.6ohm
Power Dissipation Pd
225mW
Transistor Case Style
SOT-23
Power Dissipation
225mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability