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BSS138W
Power MOSFET, N Channel, 50 V, 210 mA, 3.5 ohm, SOT-323, Surface Mount
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560 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.051 |
| 10+ | $0.051 |
| 25+ | $0.051 |
| 50+ | $0.051 |
| 100+ | $0.051 |
| 250+ | $0.051 |
| 500+ | $0.051 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS138W
Newark Part No.31Y0562
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id210mA
Drain Source On State Resistance3.5ohm
On Resistance Rds(on)1.17ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Power Dissipation Pd340mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.3V
Power Dissipation340mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Alternatives for BSS138W
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Product Overview
The BSS138W is a N-channel enhancement-mode FET designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for extremely low RDS (ON)
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
50V
Drain Source On State Resistance
3.5ohm
Transistor Case Style
SOT-323
Power Dissipation Pd
340mW
Gate Source Threshold Voltage Max
1.3V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
210mA
On Resistance Rds(on)
1.17ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
340mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate