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ManufacturerONSEMI
Manufacturer Part NoFDC6561ANCopy
Manufacturer Standard Lead Time18 weeks
Newark Part No.
Re-Reel58K8828RL
Cut Tape58K8828
Your Part Number
1,987 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.160 | $1.16 |
| Total Price | $1.16 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.160 |
| 50+ | $0.576 |
| 100+ | $0.518 |
| 250+ | $0.469 |
| 500+ | $0.418 |
| 1000+ | $0.409 |
| 2500+ | $0.401 |
| 5000+ | $0.392 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6561ANCopy
Manufacturer Standard Lead Time18 weeks
Newark Part No.
Re-Reel58K8828RL
Cut Tape58K8828
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.5A
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.082ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
- Low gate charge
- Very fast switching
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.082ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDC6561AN
3 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
