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FDMC86102L
Power MOSFET, N Channel, 100 V, 18 A, 23 mohm, MLP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 8 week(s)
| Quantity | Price |
|---|---|
| 100+ | $0.955 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$2,865.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC86102L
Newark Part No.85W3145
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id18A
Drain Source On State Resistance23mohm
On Resistance Rds(on)0.0189ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd41W
Gate Source Threshold Voltage Max1.8V
Transistor Case StyleMLP
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The FDMC86102L is a N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the ON-state resistance and yet maintains superior switching performance.
- Low-profile
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
23mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
41W
Transistor Case Style
MLP
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.0189ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
Power Dissipation
41W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate