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FDP51N25
Power MOSFET, N Channel, 250 V, 51 A, 0.048 ohm, TO-220, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $3.880 |
| 10+ | $2.220 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP51N25
Newark Part No.31Y1385
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id51A
On Resistance Rds(on)0.048ohm
Drain Source On State Resistance0.048ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd320W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation320W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The FDP51N25 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor's planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 55nC Typical low gate charge
- 63pF Typical low Crss
Applications
Power Management, Lighting, Consumer Electronics
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.048ohm
Transistor Case Style
TO-220
Power Dissipation Pd
320W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
51A
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
320W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability