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FDS4559
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.5 A, 4.5 A, 0.055 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS4559Copy
Manufacturer Standard Lead Time34 weeks
Newark Part No.
Re-Reel34C0166
Cut Tape34C0166
Your Part Number
30,000 In Stock
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Delivery in 4-6 Business Days(UK stock)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.300 | $1.30 |
| Total Price | $1.30 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.300 |
| 10+ | $1.090 |
| 25+ | $0.969 |
| 50+ | $0.876 |
| 100+ | $0.769 |
| 250+ | $0.690 |
| 500+ | $0.574 |
| 1000+ | $0.555 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS4559Copy
Manufacturer Standard Lead Time34 weeks
Newark Part No.
Re-Reel34C0166
Cut Tape34C0166
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.055ohm
Drain Source On State Resistance P Channel0.105ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backlight inverter.
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.105ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.055ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability