Print Page
FDS6898A.
MOSFET, DUAL, N, SMD, SO-8
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
2,524 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.700 |
| 10+ | $1.090 |
| 25+ | $0.961 |
| 50+ | $0.840 |
| 100+ | $0.719 |
| 250+ | $0.643 |
| 500+ | $0.566 |
| 1000+ | $0.517 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$8.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6898A.
Newark Part No.61M6319
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id9.4A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.014ohm
Continuous Drain Current Id N Channel9.4A
Continuous Drain Current Id P Channel-
Rds(on) Test Voltage4.5V
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.014ohm
Gate Source Threshold Voltage Max1V
Power Dissipation Pd2W
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
RoHS Phthalates CompliantYes
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.014ohm
Continuous Drain Current Id P Channel
-
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
9.4A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
9.4A
Rds(on) Test Voltage
4.5V
Drain Source On State Resistance N Channel
0.014ohm
Power Dissipation Pd
2W
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
RoHS Phthalates Compliant
Yes
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Alternatives for FDS6898A.
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability