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FFSD08120A
Silicon Carbide Schottky Diode, EliteSiC Series, Single, 1.2 kV, 8 A, 55 nC, TO-252 (DPAK)
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ManufacturerONSEMI
Manufacturer Part NoFFSD08120A
Newark Part No.62AC6877
Product RangeEliteSiC Series
Technical Datasheet
679 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $5.520 |
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Multiple: 1
$5.52
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFFSD08120A
Newark Part No.62AC6877
Product RangeEliteSiC Series
Technical Datasheet
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current8A
Total Capacitive Charge55nC
Diode Case StyleTO-252 (DPAK)
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCTo Be Advised
Product Overview
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Technical Specifications
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
55nC
No. of Pins
3 Pin
Diode Mounting
Surface Mount
SVHC
To Be Advised
Diode Configuration
Single
Average Forward Current
8A
Diode Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability